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Artículo: AMZ-B0F2HZVTBK

Companion Guide to Semiconductor Devices Part 3

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This book is an outgrowth of notes which I prepared for a course in semiconductor devices given from 2007 to 2011 to my friends and colleagues at the advanced technology lab of Northrop Grumman. Coming from a fabrication background and, being fortunate enough never to have formally studied the material, I came with a sense of naïve wonder at how, from a single crude device that could fit into the palm of a hand, came an industry that has revolutionized the world; many of the scientists and engineers at Northrop apparently agreed because the course was received relatively enthusiastically, at least initially, before the material got significantly more complex. Semiconductor device physics is a difficult subject, probably one of the most difficult in the undergraduate curriculum. I suspect that at least part of the reason involves the requirement to literally learn a whole new vocabulary. To paraphrase Dorothy in the Wizard of Oz: Fermi levels, electron affinities, Boltzmann statistics; Oh my! And just when we are starting to feel comfortable with those concepts along comes an entirely new set of strange words which accompanies the field effect transistor – flat band, inversion, and accumulation. It's enough to make one's head swim in confusion and frustration. But there is a bright side to this seemingly dismal picture – much of the theory is conceptual and does not require rigorous mathematics. Perfectly valid exam or homework questions at both the under and graduate levels are: explain in words the operation of a PN junction diode and contrast its operation with that of a Schottky barrier; what is the effect of temperature on the position of the Fermi level in a doped semiconductor?; can two back to back diodes function as a bipolar transistor and if not, explain why not? Now it may seem like these questions are written in a foreign language but hopefully, we can agree that the answers do not involve any mathematics at all. Such questions would be almost inconceivable in for example electromagnetic field theory (which I have been privileged to teach for a number of years) or even circuit theory but they, and similar exam questions are routine in semiconductor device physics. That is not to say that mathematics does not play a significant role in semiconductor devices; as you "surf" thru this book, you will see quite a bit of rather nasty mathematics. And there is a reason – one thing you will not see is the statement "it can be shown that…." Which is why I named the book “A Companion to Semiconductor Devices”; it is not a formal text. My goal is to take the emphasis off of mathematical developments which are all too often left as either end of chapter exercises or homework assignments. Proving mathematical expressions is at best time consuming and can be downright frustrating. In volume 3 we focus on the bipolar junction transistor (BJT) and the metal oxide semiconductor devices. The BJT was the first transistor structure to be put into practical use beginning in the 1950's. Charge flow in a BJT is dominated by diffusion current. The analysis follows naturally from our discussion of the PN junction device. The equations of the full BJT structure are significantly more complex than the PN junction, but the qualitative analysis is less convoluted. We emphasize the qualitative understanding of the BJT operation before diving into the complete quantitative development. The relative equations are derived in detail, but the intermediate steps can certainly be skipped over if desired. At the end of each derivation, we attempt to analyze the final equation. We also introduce a number of second order effects which impact BJT performance and are amenable to analysis. These include the "early" effect, high level injection, and the hetero junction BJT. We conclude with a discussion of BJT biasing and a collection of solved problems. Chapters 17 thru 19 cover the MOS structure.

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